|Place of Origin:||Anyang Henan|
|Brand Name:||Guo Rui|
|Minimum Order Quantity:||Negotiable|
|Packaging Details:||1MT big bag or as per customer request|
|Delivery Time:||Half a month after signing the contract|
|Payment Terms:||L/C, T/T|
|Exterior:||Yellow To Green To Blue To Black Crystals, Depending On Their Purity||Packing:||As Customers' Requirement|
10mm Silicon Carbide Powder,
10mm ferro alloy metal,
SiC98 Silicon Carbide Powder
Steelmaking Silicon Carbide Powder / Hardness Of Silicon Carbide A Material
Diamond sand has been transformed into silicon carbide, quartz sand, petroleum coke (or coal) and wood (salts used to produce green silicon fuel) and fused silicon carbide (also known as silicon fuel) in a high temperature electric furnace. for products with a high arsenic content. It is more cost -effective and can be described as a gold teacher or fireproof.
|SiC||F.C||Fe ₂O ₃|
|Other chemical composition and size can be supplied upon request.|
High -intensity silicon: tolerance and utility, strength and economy of 9.5Crystal: low -grade silicon carbide (about 85% raw fuel) is a high -profile separation system, which accelerates the adaptation of chemical composition and steel quality and is widely used.STRY is a special semiconductor structure.
Characteristics of silicon carbide:
1. Good stability.
Silicon carbide boiled in HCl, H2SO4 and HF will not be eroded. SiC does not react with silicic acid at high temperature, so it has good resistance to acidic slag. SiC and lime begin to react at 525 degrees, and the reaction is significant at around 1000 degrees, and the reaction with copper oxide has been strongly carried out at 800 degrees. . The reaction with iron oxide is carried out at 1000-1200 degrees, and it has obviously cracked by 1300 degrees. Reacts with manganese oxide from 1360 degrees to cracking reaction. SiC reacts in chlorine gas from 600 degrees to 1200 degrees to decompose it into SiCl4 and CCl4. The molten alkali can decompose SiC under fiery heat.
2. Good oxidation resistance
Silicon carbide has good oxidation resistance at room temperature, and the residual Si, C, and iron oxide during the synthesis of SiC have an effect on the degree of oxidation of SiC. Under ordinary oxidizing atmosphere, pure SiC can be safely used at temperatures up to 1500 degrees, while silicon carbide containing some impurities will oxidize at 1220 degrees.
3. Good thermal shock resistance.
Since the temperature at which silicon carbide does not melt and decompose vapor is high, and has high thermal conductivity and low thermal expansion, it has good thermal shock resistance.
F & Q:
1. What is our MOQ?
Basically, Our MOQ is 20 tons. There is no specific limit to order, we can give the best offer according to your situation.
2. Do you provide samples?
Yes, We do. Samples are always available and they can be sent to you directly.
3. How long does the delivery time take?
Our normal delivery time takes about 3 weeks once the contract singed, but it also depends on the quantity of the order.
4. Can we visit your plant?
Of course, we will be always looking for you.
Contact Person: Wu
Tel: +86 13837103420